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DCR3030V42
Phase Control Thyristor Preliminary Information
DS5810-1.4 September 2009 (LN26859)
FEATURES
Double Side Cooling High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 3030A 40600A 1500V/s 400A/s
APPLICATIONS
High Power Drives High Voltage Power Supplies Static Switches
* Higher dV/dt selections available
VOLTAGE RATINGS
Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V 4200 4000 3500 3000 Conditions
DCR3030V42 DCR3030V40 DCR3030V35 DCR3030V30
Tvj = -40C to 125C, IDRM = IRRM = 200mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR3030V42
Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. Outline type code: V (See Package Details for further information)
Fig. 1 Package outline
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DCR3030V42
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60C unless stated otherwise
Symbol Double Side Cooled IT(AV) IT(RMS) IT
Parameter
Test Conditions
Max.
Units
Mean on-state current RMS value Continuous (direct) on-state current
Half wave resistive load -
3030 4760 4550
A A A
SURGE RATINGS
Symbol ITSM It
2
Parameter Surge (non-repetitive) on-state current I t for fusing
2
Test Conditions 10ms half sine, Tcase = 125C VR = 0
Max. 40.6 8.24
Units kA MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance - case to heatsink Clamping force 54kN (with mounting compound) Tvj Tstg Fm Virtual junction temperature Storage temperature range Clamping force (blocking) Double side Single side Min. -55 48.0 Max. 0.00746 0.0130 0.0178 0.002 0.004 125 125 59.0 Units C/W C/W C/W C/W C/W C C kN
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DCR3030V42
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt dI/dt
Parameter Peak reverse and off-state current Max. linear rate of rise of off-state voltage Rate of rise of on-state current
Test Conditions At VRRM/VDRM, Tcase = 125C To 67% VDRM, Tj = 125C, gate open From 67% VDRM to 2x IT(AV) Gate source 30V, 10, tr < 0.5s, Tj = 125C
Repetitive 50Hz Non-repetitive
Min. -
Max. 200 1500 200 400
Units mA V/s A/s A/s
VT(TO)
Threshold voltage - Low level Threshold voltage - High level
200A to 1700A at Tcase = 125C 1700A to 7000A at Tcase = 125C 200A to 1700A at Tcase = 125C 1700A to 7000A at Tcase = 125C VD = 67% VDRM, gate source 30V, 10 tr = 0.5s, Tj = 25C
TBD
0.82 0.98 0.292 0.198 TBD
V V m m s
rT
On-state slope resistance - Low level On-state slope resistance - High level
tgd
Delay time
tq
Turn-off time
Tj = 125C, VR = 200V, dI/dt = 1A/s, dVDR/dt = 20V/s linear
250
500
s
QS IL IH
Stored charge Latching current Holding current
Tj = 125C, dI/dt - 1A/s, VR pk =3000V, VRM= 1700V Tj = 25C, VD = 5V Tj = 25C, RG-K = , ITM = 500A, IT = 5A
1600 -
3500 3 300
C A mA
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DCR3030V42
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT VGD IGT IGD
Parameter Gate trigger voltage Gate non-trigger voltage Gate trigger current Gate non-trigger current
Test Conditions VDRM = 5V, Tcase = 25C At VDRM, Tcase = 125C VDRM = 5V, Tcase = 25C VDRM = 5V, Tcase = 25C
Max. 1.5 TBD 250 TBD
Units V V mA mA
CURVES
7000
Instantaneous on-state currentTI - (A)
6000 5000 4000 3000 2000 1000 0 0.5
min 125C max 125C 25C max 25C
1.0
1.5
2.0
2.5
Instantaneous on-state voltage V T - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT
A = 0.866995 B = -0.042053 C = 0.000100 D = 0.014062 these values are valid for Tj = 125C for IT 500A to 10000A
Where
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SEMICONDUCTOR
16 14
130
Maximum case temperature, T case ( C )
Mean power dissipation - (kW)
180 120 90 60 30
120 110 100 90 80 70 60 50 40 30 20 10 0
0 1000 2000 3000
12 10 8 6 4 2 0 0 1000 2000 3000 4000 5000
180 120 90 60 30
o
4000
5000
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation - sine wave
Mean on-state current, IT(AV) - (A)
Fig.4 Maximum permissible case temperature, double side cooled - sine wave
130
Maximum heatsink temperature, T Heatsink - ( C)
120 110 100 90 80 70 60 50 40 30 20 10 0 0 1000 2000
180 120 90 60 30
o
12 11
Mean power dissipation - (kW)
10 9 8 7 6 5 4 3 2 1 0 0 1000 2000 3000 4000 d.c. 180 120 90 60 30
3000
4000
5000
6000
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature, double side cooled - sine wave
Mean on-state current, IT(AV) - (A)
Fig.6 On-state power dissipation - rectangular wave
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DCR3030V42
SEMICONDUCTOR
Maximum permissible case temperature , T - (C) case
130 180 120 90 60 30
o
130
120 110 100 90 80 70 60 50 40 30 20 10 0 0 2000 4000 6000
T Maximum heatsik temperature heatsink - ( C)
d.c.
120 110 100 90 80 70 60 50 40 30 20 10 0
d.c. 180 120 90 60 30
8000
0
1000
2000
3000
4000
5000
6000
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.7 Maximum permissible case temperature, double side cooled - rectangular wave
Fig.8 Maximum permissible heatsink temperature, double side cooled - rectangular wave
1 0.9206 0.0076807 0.9032 0.0075871 0.9478 0.0078442 2 1.8299 0.0579454 1.6719 0.0536531 2.0661 0.0645541 3 3.4022 0.4078613 3.0101 0.3144537 1.6884 0.3894389 4 1.3044 1.2085 7.4269 5.624 13.0847 4.1447
20
Double side cooled Anode side cooled
Ri (C/kW) Ti (s) Ri (C/kW) Ti (s) Ri (C/kW) Ti (s)
Thermal Impedance , Zth(j-c) - ( C/kW)
18 16 14 12 10 8 6 4 2 0 0.001 Double Side Cooling Anode Side Cooling Cathode Sided Cooling
Cathode side cooled
Zth = [Ri x ( 1-exp. (t/ti))]
Rth(j-c) Conduction
[1]
Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c.
Double side cooling Zth (z) 180 120 90 60 30 15 sine. 1.34 1.57 1.83 2.08 2.27 2.36 rect. 0.88 1.30 1.54 1.81 2.11 2.28 180 120 90 60 30 15 Anode Side Cooling Zth (z) sine. 1.34 1.57 1.84 2.08 2.28 2.37 rect. 0.88 1.30 1.54 1.81 2.11 2.28 Cathode Sided Cooling Zth (z) 180 120 90 60 30 15 sine. 1.33 1.57 1.83 2.07 2.26 2.35 rect. 0.88 1.29 1.53 1.80 2.10 2.26
0.01
0.1
1
10
100
Time ( s )
Fig.9 Maximum (limit) transient thermal impedance - junction to case (C/kW)
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DCR3030V42
SEMICONDUCTOR
Fig.10 Multi-cycle surge current
18000 QSmax = 16000 14000
Stored Charge, Q - (uC) S
Fig.11 Single-cycle surge current
600
3397.4*(di/dt)0.5061
500
Reverse recovery current, I R - (A) R
QSmin = 1357.3*(di/dt)
0.6271
IRRmax = 48.236*(di/dt)0.7553
12000 10000 8000 6000 4000 2000 0 0 5 10 15
400
300
IRRmin
=
29.853*(di/dt)0.8222
Conditions: o Tj=125 C VRpeak ~ 2500V VRM ~ 1700V snubber as approriate to control reverse voltages
Conditions: Tj = 125oC VRpeak ~ 2500V VRM ~ 1700V snubber as appropriate to control reverse voltages.
200
100
20
25
30
0 0 5 10 15 20 25 30 Rate of decay of on-state current, di/dt - (A/us)
Rate of decay of on-state current, di/dt - (A/us)
Fig. 12 Stored Charge
Fig. 13 Reverse Recovery Current
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DCR3030V42
SEMICONDUCTOR
Pulse Width us 100 200 500 1000 10000
Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 -
400 150 125 100 25 -
Fig14 Gate Characteristics
30
Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C
25
Gate trigger voltage, V - (V) GT
20
15
10
5
0 0 1 2 3 4 5 6 7 8 9 10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
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DCR3030V42
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
3rd ANGLE PROJECTION
DO NOT SCALE
IF IN DOUBT ASK HOLE O3.60 X 2.00 DEEP (IN BOTH ELECTRODES)
20 OFFSET (NOM.) TO GATE TUBE
O110.0 MAX. CATHODE
O1.5
O73.0 NOM.
Device DCR1474SV18 DCR1475SV28 DCR1476SV42 DCR1478SV48 DCR1574SV28 DCR1575SV42 DCR1576SV52 DCR4060V22 DCR3780V28 DCR3030V42 DCR2720V52 DCR2290V65 DCR1910V85
Maximum Minimum Thickness Thickness (mm) (mm) 27.265 26.515 27.34 26.59 27.57 26.82 27.69 26.94 27.34 26.59 27.57 26.82 27.69 26.94 27.265 26.515 27.34 26.59 27.57 26.82 27.69 26.94 27.95 27.2 28.31 27.56
GATE ANODE O73.0 NOM. FOR PACKAGE HEIGHT SEE TABLE
NOMINAL WEIGHT 1160g
Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: V
Fig.16Package outline
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DCR3030V42
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee exp ress or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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